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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PBR951 UHF wideband transistor
Product specification Supersedes data of 1998 Jun 09 File under Discrete Semiconductors, SC14 1998 Aug 10
Philips Semiconductors
Product specification
UHF wideband transistor
FEATURES * Small size * Low noise * Low distortion * High gain * Gold metallization ensures excellent reliability. APPLICATIONS * Communication and instrumentation systems.
1
handbook, halfpage
PBR951
PINNING - SOT23 PIN 1 2 3 base emitter collector DESCRIPTION
3 3
DESCRIPTION Silicon NPN transistor in a surface mount 3-pin SOT23 package. The transistor is primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular telephones, cordless phones, radar detectors, pagers and satellite TV-tuners.
1
Top view
2
MAM255
2
Marking code: W2.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA SYMBOL Cre fT GUM F Ptot Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER feedback capacitance transition frequency maximum unilateral power gain noise figure total power dissipation thermal resistance from junction to soldering point CONDITIONS IC = 0; VCB = 6 V; f = 1 MHz IC = 30 mA; VCE = 6 V; fm = 1 GHz IC = 30 mA; VCE = 6 V; Tamb = 25 C; f = 1 GHz S = opt; IC = 5 mA; VCE = 6 V; f = 1 GHz Ts = 60 C; note 1 Ptot = 365 mW 8 14 1.3 - - TYP. 0.4 MAX. - - - - 365 315 UNIT pF GHz dB dB mW K/W
1998 Aug 10
2
Philips Semiconductors
Product specification
UHF wideband transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System IEC 134. SYMBOL VCBO VCEO VEBO IC IC(AV) Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER thermal resistance from junction to soldering point; note 1 CONDITIONS Ptot = 365 mW; Ts = 60 C; note 1 VALUE 315 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) average collector current total power dissipation storage temperature junction temperature Ts = 60 C; note 1 open emitter open base open collector CONDITIONS MIN. - - - - - - -65 -
PBR951
MAX. 20 10 1.5 100 100 365 +150 175
UNIT V V V mA mA mW C C
UNIT K/W
1998 Aug 10
3
Philips Semiconductors
Product specification
UHF wideband transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL DC characteristics V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector-base leakage current emitter-base leakage current DC current gain IC = 100 A; IE = 0 IC = 100 A; IB = 0 IE = 10 A; IC = 0 VCB = 10 V; IE = 0 VEB = 1 V; IC = 0 IC = 5 mA; VCE = 6 V IC = 15 mA; VCE = 6 V AC characteristics Cre fT GUM feedback capacitance transition frequency maximum unilateral power gain; note 1 IC = 0; VCB = 6 V; f = 1 MHz IC = 30 mA; VCE = 6 V; fm = 1 GHz IC = 30 mA; VCE = 6 V; Tamb = 25 C; f = 1 GHz IC = 30 mA; VCE = 6 V; Tamb = 25 C; f = 2 GHz F noise figure S = opt; IC = 5 mA; VCE = 6 V; f = 1 GHz S = opt; IC = 5 mA; VCE = 6 V; f = 2 GHz Note - - - - - - 0.4 8 14 8 1.3 2 20 10 1.5 - - 50 - - - - - - 100 100 PARAMETER CONDITIONS MIN. TYP.
PBR951
MAX. - - - 100 100 200 - - - - - - -
UNIT
V V V nA nA
pF GHz dB dB dB dB
S 21 2 1. GUM is the maximum unilateral power gain, assuming S12 is zero. G UM = 10 log -------------------------------------------------------------- dB ( 1 - S 11 2 ) ( 1 - S 22 2 )
1998 Aug 10
4
Philips Semiconductors
Product specification
UHF wideband transistor
PBR951
handbook, halfpage
400
MDA887
handbook, halfpage
120
MDA888
Ptot (mW) 300
hFE
80
200
40 100
0 0 50 100 150 Ts (C) 200
0 0 10 20 30 40 IC (mA) 50
VCE = 6 V.
Fig.2
Power derating as a function of soldering point temperature.
Fig.3
DC current gain as a function of collector current; typical values.
handbook, halfpage
0.8
MDA889
handbook, halfpage
10
MDA890
Cre (pF) 0.6
fT (GHz)
8
6 0.4 4 0.2 2
0 0 4 8 VCB (V) 12
0 0 10 20 30 IC (mA) 40
IC = 0; f = 1 MHz.
VCE = 6 V; f = 1 GHz; Tamb = 25 C.
Fig.4
Feedback capacitance as a function of collector-base voltage; typical values.
Fig.5
Transition frequency as a function of collector current; typical values.
1998 Aug 10
5
Philips Semiconductors
Product specification
UHF wideband transistor
PBR951
handbook, halfpage
20 gain
MDA891
handbook, halfpage
50 gain (dB) 40
MDA892
(dB) MSG 16
Gmax
GUM MSG
12
GUM
30
8
20 Gmax
4
10 MSG
0 0 10 20 30 IC (mA) 40
0 10
102
103
f (MHz)
104
f = 1 GHz; VCE = 6 V.
IC = 5 mA; VCE = 6 V.
Fig.6
Gain as a function of collector current; typical values.
Fig.7
Gain as a function of frequency; typical values.
handbook, halfpage
50 gain (dB) 40
MDA893
handbook, halfpage
50 gain (dB) 40
MDA894
MSG 30
GUM 30
MSG
GUM
20 Gmax 10 MSG
20 Gmax 10
MSG
0 10
102
103
f (MHz)
104
0 10
102
103
f (MHz)
104
IC = 15 mA; VCE = 6 V.
IC = 30 mA; VCE = 6 V.
Fig.8
Gain as a function of frequency; typical values.
Fig.9
Gain as a function of frequency; typical values.
1998 Aug 10
6
Philips Semiconductors
Product specification
UHF wideband transistor
PBR951
handbook, halfpage
4
MDA895
handbook, halfpage
(1)
4
MDA896
F (dB) 3
F (dB) 3
(1)
(2)
(2)
2
(3) (5) (4)
2
(3)
1
1
0 10-1
1
10
IC (mA)
102
0 102
103
f (MHz)
104
VCE = 6 V. (1) f = 2000 MHz. (2) f = 1500 MHz.
(3) f = 1000 MHz. (4) f = 900 MHz. (5) f = 500 MHz.
VCE = 6 V. (1) IC = 30 mA.
(2) IC = 15 mA. (3) IC = 5 mA.
Fig.10 Minimum noise figure as a function of collector current, typical values.
Fig.11 Minimum noise figure as a function of frequency, typical values.
1998 Aug 10
7
Philips Semiconductors
Product specification
UHF wideband transistor
APPLICATION INFORMATION SPICE parameters for the PBR951 die SEQUENCE No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19(1) 20(1) 21(1) 22 23 24 25 26 27 28 29 30 31 32 33 34 35(1) 36(1) 37(1) 38 PARAMETER IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RB IRB RBM RE RC XTB EG XTI CJE VJE MJE TF XTF VTF ITF PTF CJC VJC MJC XCJC TR CJS VJS MJS FC VALUE 0.963 102.3 1.002 64.75 841.1 35.77 2.138 90.16 1.000 3.198 25.77 156.6 1.047 6.071 0.000 2.478 0.164 1.315 0.000 1.110 3.000 1.161 600.0 0.394 3.073 10.25 4.599 53.49 0.000 409.9 287.1 0.111 0.104 0.000 0.000 700.0 0.000 0.888 - - V mA fA - - - V mA aA - A - eV - pF mV - ps - V mA deg fF mV - - ps F mV - - Cbe Ccb Cce L1 L2 L3 LB LE List of components (see Fig.12) DESIGNATION 7 80 80 0.35 0.17 0.35 0.40 0.83 VALUE
E L3 B L1 LB B' E' LE C'
handbook, halfpage
PBR951
SEQUENCE No. 39(2) UNIT fA 40(2) 41 42 Notes
PARAMETER Cbpb Cbpe AF KF
VALUE 73.00 131.00 1.000
UNIT fF fF -
4 x 10-16 -
1. These parameters have not been extracted, the default values are shown. 2. Cbpb, Cbpe; base-bondpad and emitter-bondpad capacitance to collector.
C cb
L2 C
C be
Cce
MBC964
QLB = 50; QLE = 50; QLB,E(f) = QLB,E(f/fc); fc = scaling frequency = 1 GHz.
Fig.12 Package equivalent circuit SOT23.
UNIT fF fF fF nH nH nH nH nH
1998 Aug 10
8
Philips Semiconductors
Product specification
UHF wideband transistor
PBR951
handbook, full pagewidth
90 1.0 1 135 0.5 2 45 0.8 0.6 0.4 0.2 180 0 0.2 2 GHz 0.5 1 GHz 500 MHz 0.2 200 MHz 100 MHz 40 MHz 5 1 2 5 0 0
0.2 3 GHz
5
-135
0.5 1
2
-45
MDA772
1.0
-90 VCE = 6 V; IC = 30 mA; Zo = 50 .
Fig.13 Common emitter input reflection coefficient (S11); typical values.
handbook, full pagewidth
90
135
45
100 MHz 40 MHz 50 180 40 30 20
200 MHz 500 MHz 1 GHz 2 GHz 3 GHz
10
0
-135
-45
-90 VCE = 6 V; IC = 30 mA.
MDA773
Fig.14 Common emitter forward transmission coefficient (S21); typical values.
1998 Aug 10
9
Philips Semiconductors
Product specification
UHF wideband transistor
PBR951
handbook, full pagewidth
90
135 3 GHz 2 GHz 1 GHz 0.5 180 0.4 0.3 0.2 0.1 40 MHz 500 MHz 200 MHz
45
0
-135
-45
-90 VCE = 6 V; IC = 30 mA.
MDA774
Fig.15 Common emitter reverse transmission coefficient (S12); typical values.
handbook, full pagewidth
90 1.0 1 135 0.5 2 45 0.8 0.6 0.4 0.2 180 0 0.2 0.5 1 2 5 0 0
0.2
5
0.2
40 MHz 2 GHz 1 GHz 500 MHz 3 GHz 200 MHz 100 MHz 5
-135
0.5 1
2
-45
MDA775
1.0
-90 VCE = 6 V; IC = 30 mA; Zo = 50 .
Fig.16 Common emitter output reflection coefficient (S22); typical values.
1998 Aug 10
10
Philips Semiconductors
Product specification
UHF wideband transistor
PBR951
handbook, full pagewidth
90 unstable region source 135 0.5 1 2 unstable region load 45 1.0 0.8 0.6 0.4 0.2 180 0 G = 15 dB G = 14 dB 0.2 G = 13 dB 0.5 NF = 1.3 dB 1 2 NF = 1.5 dB NF = 1.7 dB 5 5 0 0
0.2
OPT
5
-135
0.5 1
2
-45
MDA770
1.0
f = 1 GHz; VCE = 6 V; IC = 5 mA; Zo = 50 .
-90
Fig.17 Common emitter available gain circles; typical values.
handbook, full pagewidth
90 1 135 0.5 Gmax = 9.164 dB 0.2 NF = 2.6 dB 0 0.2 NF = 2.4 dB 0.5 1 NF = 2.2 dB OPT G = 9 dB 0.2 G = 8 dB unstable region source -135 G = 7 dB 0.5 1
MDA771
unstable region load 2 45
1.0 0.8 0.6 0.4 0.2
5
180
2
5
0
0
5
2
-45 1.0
f = 2 GHz; VCE = 6 V; IC = 5 mA; Zo = 50 .
-90
Fig.18 Common emitter available gain circles; typical values.
1998 Aug 10
11
Philips Semiconductors
Product specification
UHF wideband transistor
PACKAGE OUTLINE Plastic surface mounted package; 3 leads
PBR951
SOT23
D
B
E
A
X
HE
vMA
3
Q A A1
1
e1 e bp
2
wMB detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1
OUTLINE VERSION SOT23
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1998 Aug 10
12
Philips Semiconductors
Product specification
UHF wideband transistor
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Short-form specification Limiting values
PBR951
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1998 Aug 10
13
Philips Semiconductors
Product specification
UHF wideband transistor
NOTES
PBR951
1998 Aug 10
14
Philips Semiconductors
Product specification
UHF wideband transistor
NOTES
PBR951
1998 Aug 10
15
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1998
SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125104/1200/05/pp16
Date of release: 1998 Aug 10
Document order number:
9397 750 04135

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